The 850 EVO reads, writes and multi-tasks at incredible speeds, enhancing boot-up speed, application loading and multi-tasking performance.
Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
You can obtain up to 1.9x faster performance than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds.
Samsung’s Magician software enables RAPID Mode for up to 2x faster performance by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.
The 850 EVO doubles the endurance and reliability compared to the previous generation 840 EVO. With enhanced long-term reliability, the 850 EVO assures longterm dependable performance of up to 30% longer than the previous generation 840 EVO.
The 850 EVO delivers significantly longer battery life on your notebook with a controller designed and optimized for 3D V-NAND that supports Device Sleep for Windows at a highly efficient 2mW.
The 850 EVO comes fortified with the latest hardware-based full disk encryption engine. The AES 256-bit hardware encryption secures data without any performance degradation and complies with TCG Opal 2.0 to keep your data protected at all times.
The 850 EVO’s Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions to ensure the integrity of your data. This protects your data while maintaining responsiveness to help ensure your computer is always safe from overheating.
In three simple steps, the Samsung One-stop Install Navigator software easily allows you to migrate all the data and applications from your existing drive to the 850 EVO. The included Samsung Magician software also allows you to setup, optimize, and manage your system for peak SSD performance.
The result – the rock-solid EVO 850, with enhanced performance, lower power consumption with an up to 1 GB LPDDR2 DRAM cache memory and improved energy-efficiency with the MEX/MGX controller – all from the #1 memory manufacturer in the world.
|Dimension||100 x 69.85 x 6.8 (mm)|
|Interface||SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)|
|Form factor||2.5 inch|
|Controller||120/250/500GB : Samsung MGX controller
1TB: Samsung MEX controller
|NAND Flash Memory||Samsung 32 layer 3D V-NAND|
|DRAM Cache Memory||256MB (120GB) or 512MB(250GB&500GB) or 1GB (1TB) LPDDR2|
|Performance||Sequential Read Max. 540 MB/s
Sequential Write Max. 520 MB/s
4KB Random Read (QD1) Max. 10,000 IOPS
4KB Random Write (QD1) Max. 40,000 IOPS
4KB Random Read (QD32) Max. 98,000 IOPS(500GB/1TB)
Max. 97,000 IOPS(250GB)
Max. 94,000 IOPS(120GB)
4KB Random Write (QD32) Max. 90
|Data Security||AES 256-bit Full Disk Encryption (FDE)
TCG/Opal V2.0, Encrypted Drive(IEEE1667)
|Weight||Max. 66g (1TB)|
|Reliability||MTBF: 1.5 million hours|
500GB/1TB: 150 TBW
|Power Consumption||Active Read/Write (Average): Max. 3.7W(1TB) / Max. 4.4W(1TB)|
Device Sleep: 2mW(120/250/500GB), 4mW(1TB)
|Supporting features||TRIM(Required OS support), Garbage Collection, S.M.A.R.T.|
|Temperature Operating||0℃ to 70℃
Non-Operating: -40℃ to 85℃
|Humidity||5% to 95%, non-condensing|
|Vibration||Non-Operating: 20~2000Hz, 20G|
|Shock||Non-Operating: 1500G, duration 0.5m sec, 3 axis|
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