Samsung's 850 EVO series SSD is the industry's #1 best-selling SSD and is perfect for everyday computing. Powered by Samsung's V-NAND technology, the 850 EVO transforms the everyday computing experience with optimized performance and endurance. Designed to fit desktop PCs, laptops, and ultrabook
Achieve incredible read/write performance to maximize your everyday computing experience with Samsung's TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s
Samsung's Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.
The 850 EVO doubles the endurance and reliability compared to the previous generation 840 EVO and features a class-leading 5 year warranty. With enhanced long-term reliability, the 850 EVO assures long-term dependable performance of up to 30% longer than the previous generation 840 EVO.
The 850 EVO delivers significantly longer battery life on your notebook with a controller designed and optimized for 3D V-NAND that supports. Device Sleep for Windows at a highly efficient 2mW. The 850 EVO supports 25% better power efficiency than the 840 EVO during write operations thanks to ultr
|Interface||SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface|
|Sequential Read Speed||Up to 540 MB/s Sequential Read * *Performance may vary based on system hardware & configuration|
|Sequential Write Speed||Up to 520 MB/s Sequential Write * *Performance may vary based on system hardware & configuration|
|Random Read Speed||Random Read (4KB, QD32):Up to 97,000 IOPS Random Read * Performance may vary based on system hardware & configurationRandom Read (4KB, QD1): Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration|
|Random Write Speed||Random Write (4KB, QD32): Up to 88,000 IOPS Random Write * *Performance may vary based on system hardware & configurationRandom Write (4KB, QD1): Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration|
|Memory Speed||Samsung 32 layer 3D V-NANDSamsung 1GB Low Power DDR2 SDRAM|
|Controller||Samsung MEX Controller|
|AES Encryption||AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)|
|GC (Garbage Collection)||Auto Garbage Collection Algorithm|
|WWN Support||World Wide Name supported|
|Device Sleep Mode Support||Yes|
|Voltage||3V ± 5% Allowable voltage|
|Reliability (MTBF)||1.5 Million Hours Reliability (MTBF)|
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