SAMSUNG SSD 850 EVO mSATA Solid State Drive SSD 120GB/250GB/500GB/1TB

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Innovative V-NAND Technology, Incredible Read/Write Performance.

Unlock Your Computer's Potential

Samsung's 850 EVO series SSD is the industry's #1 best-selling SSD and is perfect for everyday computing. Powered by Samsung's V-NAND technology, the 850 EVO transforms the everyday computing experience with optimized performance and endurance. Designed to fit desktop PCs, laptops, and ultrabook

TurboWrite Technology

Achieve incredible read/write performance to maximize your everyday computing experience with Samsung's TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s


Samsung's Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.

Enhanced Endurance and Reliability

The 850 EVO doubles the endurance and reliability compared to the previous generation 840 EVO and features a class-leading 5 year warranty. With enhanced long-term reliability, the 850 EVO assures long-term dependable performance of up to 30% longer than the previous generation 840 EVO.

Improved Energy Efficiency

The 850 EVO delivers significantly longer battery life on your notebook with a controller designed and optimized for 3D V-NAND that supports. Device Sleep for Windows at a highly efficient 2mW. The 850 EVO supports 25% better power efficiency than the 840 EVO during write operations thanks to ultr


Product Type mSATA
Interface SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Sequential Read Speed Up to 540 MB/s Sequential Read * *Performance may vary based on system hardware & configuration
Sequential Write Speed Up to 520 MB/s Sequential Write * *Performance may vary based on system hardware & configuration
Random Read Speed Random Read (4KB, QD32):Up to 97,000 IOPS Random Read * Performance may vary based on system hardware & configurationRandom Read (4KB, QD1): Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration
Random Write Speed Random Write (4KB, QD32): Up to 88,000 IOPS Random Write * *Performance may vary based on system hardware & configurationRandom Write (4KB, QD1): Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration
Memory Speed Samsung 32 layer 3D V-NANDSamsung 1GB Low Power DDR2 SDRAM
Controller Samsung MEX Controller
Trim Support Yes
AES Encryption AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
S.M.A.R.T. Support Yes
GC (Garbage Collection) Auto Garbage Collection Algorithm
WWN Support World Wide Name supported
Device Sleep Mode Support Yes
Internal Storage Yes
Temperature proof Yes
Voltage 3V ± 5% Allowable voltage
Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
More Information
SKU ZP3020700507042
Color Green
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